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学术报告(20180615)Atomic point defects and interfaces in 2D materials
发布时间:2018-06-15

报告题目: Atomic point defects and interfaces in 2D materials
报告人: 陶成钢 弗吉尼亚理工大学教授
报告人单位: 科技楼北418
报告时间: 6月18日上午9:30
报告地点: 科技楼北418
报告摘要:  
  Emerging 2D materials, such as atomically thin transition metal dichalcogenides (TMDs) and graphene, have been intensely studied due to their intriguing physical and chemical properties. These properties are usually governed by atomic point defects and interfaces in 2D materials, including edges and domain boundaries. Investigation of the defect and interface structures, therefore, is essential for rational design and optimization of 2D materials. In this talk, I will present our recent scanning tunneling microscopy and spectroscopy studies of atomic point defects and interfaces in 2D TMDs, focusing on those in few-layer PtSe2 and MoS2/WS2 heterostructures. I will further discuss the impacts of external stimuli on defects and interfaces. Particularly, I will show our findings on the shape evolution of monolayer vacancy islands on TiSe2 surfaces, and the associated growth kinetics, under electrical stressing.
报告人简介:  
  Dr. Chenggang Tao is from the Department of Physics at Virginia Tech. He received his PhD from the University of Maryland under Prof. Ellen Williams, and then worked in Prof. Mike Crommie’s Group at the University of California at Berkeley as a postdoc. Dr. Tao’s current research mainly focuses on emerging 2D materials, energy related materials and surface science, with funding from the US Army Research Office. He has published a number of papers on 2D materials and surface dynamics in leading journals, including Science, Nature Physics, PRL, JACS and Nano Lett

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